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| JMnic Product Specification Silicon PNP Power Transistors 2SB1655 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide area of safe operation Complement to type 2SD2394 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector MAX -80 -60 -7 -3 -6 2 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;IB=0 IC=-50|I IE=-50|I A ;IE=0 A ;IC=0 MIN -60 -80 -7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT 2SB1655 TYP. MAX UNIT V V V IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 100 50 15 -1.5 -1.5 -10 -10 200 |I |I V V A A pF MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1655 Fig.2 Outline dimensions 3 |
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